PART |
Description |
Maker |
TX2-5V TX2-12V TX2-3V TX2-L-1.5V TX2-48V TX2-L2-H- |
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 2阿继电器容量高浪涌电 RELAY, SOLID STATE 40A 240VAC FILM/M CAPACITANCE=0.1 VOLT=63 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE
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Nais(Matsushita Electric Wo... Panasonic, Corp. YEONHO Electronics Co., Ltd. NAIS[Nais(Matsushita Electric Works)] http://
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EE2-5NU EE2-12NUX-R EE2-12NUX-L EE2-12NUX EE2-12NU |
POWER/SIGNAL RELAY, DPDT, LATCHED, 12VDC (COIL), 2A (CONTACT), 220VDC (CONTACT), SURFACE MOUNT-STRAIGHT High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type Compact and lightweight High breakdown voltage Surface mounting type Replaced by PCM1602A : 105dB SNR 6-Channel Audio DAC 48-LQFP OSC 5V SMT PLAS 14X9 CMOS 105dB SNR 8-Channel Audio DAC 28-SSOP/QSOP -25 to 70 Replaced by PCM1754 : 97dB SNR Stereo DAC 14-SOIC Replaced by PCM1609A : 105dB SNR 8-Channel Audio DAC 48-LQFP 105dB SNR 8-Channel Audio DAC 48-LQFP -25 to 85 Serial Interrupt Stream Deserializer 48-LQFP Compact and lightweight, High breakdown voltage, Surface mounting type 小巧轻盈,击穿电压高,表面安装型 Replaced by PCM1798 : 106dB SNR Stereo DAC 28-SSOP 小巧轻盈,击穿电压高,表面安装型 Compact and lightweight/ High breakdown voltage/ Surface mounting type
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NEC TOKIN CORP NEC[NEC] NEC Corp. NEC, Corp.
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BF622 Q62702-F1052 |
From old datasheet system NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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EC2-12ND EC2-12SND EC2-24ND EC2-24SND EC2-3ND EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type 高绝缘,高击穿电压,结构紧凑,重量轻,表面安装型 Driver IC; Package/Case:24-SSOP; Supply Voltage Max:5.25V; Leaded Process Compatible:No; Operating Temp. Max:70 C; Operating Temp. Min:-10 C; Peak Reflow Compatible (260 C):No; Frequency:20GHz; Interface Type:Serial
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TE Connectivity, Ltd. NEC, Corp. NEC Corp.
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2SC3646 |
High-Voltage Switching Applications Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
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TY Semicondutor TY Semiconductor Co., Ltd
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BFN21 Q62702-F1059 |
From old datasheet system PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
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SIEMENS[Siemens Semiconductor Group]
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2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
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2SA1179 |
High breakdown voltage Collector-base voltage VCBO -55 V
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TY Semiconductor Co., Ltd
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2SD1918 |
High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
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TY Semiconductor Co., Ltd
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2SA1575 |
High fT. High breakdown voltage. Adoption of FBET process.
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TY Semiconductor Co., Ltd
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2SC3971 2SC3971A |
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE(FOR HIGH BREAKDOWN VOLTAGE HIGH-SPEED SWITCHING)
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Panasonic Semiconductor
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2SC3972 2SC3972A |
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE(FOR HIGH BREAKDOWN VOLTAGE HIGH-SPEED SWITCHING)
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Panasonic Semiconductor
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